The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Apr. 03, 2000
Applicant:
Inventor:
Edward T. Croke, III, Thousand Oaks, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 3/1072 ;
Abstract
The invention provides an effective means and apparatus for allowing higher operational frequencies in heterojunction bipolar transistors by trapping silicon interstitial atoms and thereby preventing transient enhanced diffusion of boron the transistor. The invention provides for selective placement of a carbon layer in the emitter region of a heterojunction bipolar transistor. Such a layer is capable of effectively eliminating transient enhanced boron diffusion without the undesirable performance consequences.