The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Feb. 04, 2000
Cindy Reidsema Simpson, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
In one embodiment, a conductive interconnect (,) is formed in a semiconductor device by depositing a dielectric layer (,) on a semiconductor substrate (,). The dielectric layer (,) is then patterned to form an interconnect opening (,). A tantalum nitride barrier layer (,) is then formed within the interconnect opening (,). A catalytic layer (,) comprising a palladium-tin colloid is then formed overlying the tantalum nitride barrier layer (,). A layer of electroless copper (,) is then deposited on the catalytic layer (,). A layer of electroplated copper (,) is then formed on the electroless copper layer (,), and the electroless copper layer (,) serves as a seed layer for the electroplated copper layer (,). Portions of the electroplated copper layer (,) are then removed to form a copper interconnect (,) within the interconnect opening (,).