The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Sep. 21, 1998
Atsushi Ogura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
After O,ions are implanted in a silicon substrate (,), heat treatment is applied to the silicon substrate at a temperature of from 1,200° C. to 1,410° C., both inclusive, in an atmosphere having an oxygen content of from 0.1% to 1%, both inclusive, whereby a buried oxide layer (,) is formed. Subsequent to the above heat treatment, post heat treatment may be applied to the silicon substrate (,) at a temperature of from 1,200° C. to 1,410° C., both inclusive, in an atmosphere having an oxygen content of from 1% to 30%, both inclusive. Further, prior to the heat treatment, provisional heat treatment may be applied to the silicon substrate,at a temperature of form 350° C. to 1,000° C., both inclusive, for 1 hour or longer.