The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Nov. 24, 1999
Paul Wensley, Morpeth, GB;
Guenther Koffler, Villach, AT;
Abstract
Known methods for forming trench storage capacitors require the chemical vapour deposition (CVD) of an undoped silicon oxide layer in order to prevent auto doping of side wall of a semiconductor trench. This layer is deposited once an arsenic doped silicon oxide layer has been disposed and etched to an appropriate depth. Such a technique results in a complex and expensive process. It is therefore proposed to deposit (step,) the undoped silicon oxide layer,in-situ immediately after the arsenic doped silicon oxide layer,has been deposited (step,) and before etching takes place (step,). It is thus possible to remove the CVD of the undoped silicon oxide, thereby simplifying the overall process and yielding a device having improved performance characteristics.