The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Jun. 27, 2000
Jin-Mo Yoon, Seoul, KR;
Dae-Gyu Moon, Anyang-shi, KR;
LG. Philips LCD Co., Ltd., Seoul, KR;
Abstract
The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.