The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Feb. 25, 2000
Applicant:
Inventors:
Assignee:
Aisin Seiki Kabushiki Kaisha, Kariya, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
In order to provide a high mechanical strength and a progressive performance index resulting from an improved electric conductivity, a thermoelectric semiconductor is made by arranging a plurality of extruded bar-shaped thermoelectric semiconductor materials B,in a bundle. The resulting bar-shaped thermoelectric semiconductor materials B,are sintered and integrated concurrently by applying a force to each bar-shaped thermoelectric material B,along a direction L,perpendicular to an axis L,thereof. This causes flows of materials, thereby further orientating cleavage planes which causes an advanced orientation effect.