The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2001

Filed:

Apr. 30, 1999
Applicant:
Inventors:

Seshu B. Desu, Amherst, MA (US);

John J. Senkevich, Blacksburg, VA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/640 ;
U.S. Cl.
CPC ...
C23C 1/640 ;
Abstract

This invention discloses methods for the deposition of SiO,and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.


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