Method of determining model parameters for a mosfet compact model using a stochastic search algorithm

Abstract

A method of determining a set of parameters for modeling an active semiconductor device in which current flow through a channel or other area is regulated by voltage applied to the device terminals, for example, MOSFETs. The method comprises first providing a plurality of measured values for current as a function of voltage for a plurality of active semiconductor devices of differing geometries. There is then determined an initial population of vectors comprising individual values representing a plurality of desired active semiconductor device model parameters. Fitness is then evaluated for each of the vectors by comparing calculated values for current as a function of voltage from the population to the plurality of measured values for current as a function of voltage of the vectors, converting any current differences to voltage errors and adding any such voltage errors together to arrive at a fitness value for each vector. Vectors of best fitness are selected and at least one genetic operator is applied thereto to create a new population of the vectors. Vectors of best fitness are then selected. The steps of evaluating fitness and selecting vectors of best fitness are optionally repeated for such vectors of best fitness until a desired fitness is achieved to determine the desired active semiconductor device model parameters.