The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2001

Filed:

Jul. 13, 2000
Applicant:
Inventors:

Masato Kawata, Tokyo, JP;

Tsutomu Tashiro, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

A nonvolatile semiconductor memory device including a plurality of memory cells connected in parallel with each other, each of which has a memory transistor and a selecting transistor connected in series between a bit line and a source electrode, in such a configuration that information may be, via that bit line, input to and output from any one of the memory cells which is selected by a word line connected to gate electrodes of these two transistors, wherein transistor driving force of one of these two transistors of the memory cell whichever faces the bit line is enhanced. That transistor which faces the bit line is the one which lies on a drain side of the memory cell, that is, a memory transistor.


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