The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2001

Filed:

Aug. 21, 2000
Applicant:
Inventor:

Roman Korsunsky, Apex, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 1/014 ; H02J 7/00 ; H02H 3/00 ;
U.S. Cl.
CPC ...
H01M 1/014 ; H02J 7/00 ; H02H 3/00 ;
Abstract

A battery protection circuit includes back-to-back connected metal-oxide-semiconductor field-effect transistors (MOSFETs). Detection circuitry detects whether the battery is in a normal charge condition, an overcharged condition, or an over-discharged condition, and for the overcharged and over-discharged conditions the circuitry asserts a corresponding enable signal. For each MOSFET, a corresponding gate voltage regulating circuit controls the gate voltage such that (i) when the corresponding enable signal is de-asserted, the gate voltage is sufficient to enable the MOSFET to strongly conduct current in either direction, and (ii) when the corresponding enable signal is asserted, the gate voltage is a function of the polarity of drain-to-source voltage of the MOSFET. For each MOSFET, the corresponding gate voltage regulating circuit prevents the MOSFET from conducting when the drain-to-source voltage has an undesired polarity, and allows the MOSFET to conduct when the drain-to-source voltage has a desired polarity. One MOSFET prevents the flow of charge current, and the other prevents the flow of discharge current. When either MOSFET is conducting, its drain-to-source voltage is prevented from achieving a value sufficient to forward bias a parasitic diode associated with the source and drain terminals of the MOSFET. Current of correct polarity flows through the source-to-drain channel of a MOSFET rather than through the parasitic diode during the overcharged and over-discharged conditions.


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