The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2001

Filed:

Dec. 22, 1999
Applicant:
Inventors:

Tsuyoshi Kida, Tokyo, JP;

Kenji Oyachi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/329 ;
U.S. Cl.
CPC ...
H01L 2/329 ;
Abstract

An electrode structure of a semiconductor element comprises a wiring 14 formed on one main surface of a semiconductor chip, an insulating film 15 formed on the wiring 14, at least one pad 3 located at a predetermined position on the insulating film 15 and a via-hole 16 formed in the insulating film 15. The via-hole 16 is filled with a metal material for electrically connecting the wiring 14 to the pad 3 and a contact area between the via-hole 16 and the pad 3 is 3% or more of a surface area of the pad 3 on the side of the via-hole 16. With such structure, it becomes possible to restrict occurrence of breakage and/or crack of the insulating film 15 during a time when a bonding wire 18 is connected to the pad 3 to thereby improve the fabrication yield.


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