The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
May. 27, 1999
Applicant:
Inventor:
Chiou-Feng Chen, Cupertino, CA (US);
Assignee:
Actrans System Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
Nonvolatile memory cell and process in which a thin floating gate is formed with a rounded lateral edge and a thickness on the order of 100-1000 Å over a gate oxide in an active area on a silicon substrate. A tunnel oxide is formed adjacent to the rounded edge of the floating gate, and a control gate is formed with a lower portion next to the tunnel oxide and an upper portion overlying the floating gate. In some disclosed embodiments, the upper portion of the control gate completely overlies the floating gate, and in others it only partially overlies it.