The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2001

Filed:

May. 17, 1999
Applicant:
Inventors:

Mitsuhiko Ogihara, Tokyo, JP;

Hiroshi Hamano, Tokyo, JP;

Masumi Taninaka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ;
U.S. Cl.
CPC ...
H01L 2/715 ;
Abstract

A light-emitting semiconductor device has a semi-insulating semiconductor surface layer overlying a conductive semiconductor layer of a first conductive type. A diffusion region of a second conductive type extends through the semi-insulating semiconductor surface layer and ends in the conductive semiconductor layer. Positive and negative electrode contacts are provided on the upper surface of the device. Nonradiative recombination near the surface of the device is reduced because there is no pn junction in the semi-insulating semiconductor surface layer, and the device structure is suitable for matrix driving.


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