The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Dec. 22, 1999
Horst Kibbel, Erbach, DE;
Jessica Kuchenbecker, Ulm, DE;
DaimlerChrysler AG, Stuttgart, DE;
Abstract
A method for producing relaxed epitaxy layers on a semiconductor substrate by an epitaxy process, particularly molecular beam epitaxy, with a hydrogen source, wherein the following steps occur during an in situ process sequence: a hydrogen-containing intermediate layer is deposited on the substrate surface or diffused into the substrate near the surface; a strained epitaxy layer is grown on this intermediate layer; and the epitaxial layer subsequently is relaxed by a temperature treatment. A preferred layer sequence formed according to the above method includes a substrate of silicon with a hydrogen-containing intermediate layer that is deposited thereon or diffused into the substrate surface; a relaxed Si,Ge,epitaxial layer with a germanium concentration of x=0.1 to 0.3 as a first buffer layer; a hydrogen-containing intermediate layer deposited on or diffused into an outer surface of the first buffer layer; a Si,Ge,relaxed epitaxy layer with a germanium concentration of x=0.3 to 0.5 as second buffer layer; and, a Si,Ge,component structure. Additional relaxed Si,Ge,epitaxy layers with increasing germanium concentrations up to a maximum x=1 may be disposed between the second buffer layer and the component structure layer.