The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Sep. 25, 1998
Kaichi Fukuda, Fukaya, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention relates to a method of manufacturing a thin film transistor for use in a liquid crystal display apparatus or the like. In the method, impurity ions are implanted into a semiconductor by intermittently generating a plasma which generates impurity ions, for a predetermined period at a predetermined interval. By changing the duty rate at which the plasma is generated, the effective value of a beam current can be controlled over a wide range with excellent accuracy without changing rates of ions. As a result, it is possible to form a channel portion and a lightly doped drain layer of a field effect transistor which contains silicon as a main component, so that a field effect transistor and a liquid crystal display device can be manufactured with high quality and excellent productivity.