The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Jun. 21, 2000
The Australian National University, Acton, AU;
Abstract
Powerful nanosecond-range lasers using low repetition rate pulsed laser deposition produce numerous macroscopic size particles and droplets, which embed in thin film coatings. This problem has been addressed by lowering the pulse energy, keeping the laser intensity optional for evaporation, so that significant numbers of the macroscopic particles and droplets are no longer present in the evaporated plume. The result is deposition of evaporated plume on a substrate to form thin film of very high surface quality. Preferably, the laser pulses have a repetition rate to produce a continuous flow of evaporated material at the substrate. Pulse-range is typically picosecond and femtosecond and repetition rate kilohertz to hundreds of megahertz. The process may be carried out in the presence of a buffer gas, which may be inert or reactive, and the increased vapour density and therefore the collision frequency between evaporated atoms leads to the formation of nanostructured materials of increasing interest, because of their peculiar structural, electronic and mechanical properties. One of these is carbon nanotubes, which is a new form of carbon belonging to the fullerene (C,) family. Carbon nanotubes are seamless, single or multishell co-axial cylindrical tubules with or without dome caps at the extremities. Typically diameters range from 1 nm to 50 nm with a length >1 &mgr;m. The electronic structure may be either metallic or semiconducting without any change in the chemical bonding or adding of dopant. In addition, the materials have application to a wide range of established thin film applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile