The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Dec. 04, 1998
Chien-Shing Pai, Bridgewater, NJ (US);
Wei Zhu, Warren, NJ (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
Ion beam deposition, using a carbon- and fluorine-containing source or sources, is used to form a fluorinated diamond-like carbon layer in a device, the FDLC layer exhibiting a dielectric constant of 3.0 or less along with a thermal stability of at least 400° C. During the ion beam deposition, due to the unique nature of carbon chemistry, the carbon atoms combine at the substrate surface to form all possible combinations of sp,, sp,and sp,bonds. However, ion beam etching occurs along with deposition, such that atoms of the weaker carbon structures—carbyne and graphite—are removed preferentially. This leads to a buildup of a diamond-like, sp,-bonded structure with fluorine atoms, it is believed, substituted for some carbon atoms within the structure, this structure providing the desirable properties of the layer.