The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jan. 18, 2000
Memory with high speed reading operation using a switchable reference matrix ensuring charging speed
Takaki Kohno, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor memory device includes a memory cell matrix section, a reference memory cell matrix section and a sensing circuit. The memory cell matrix section includes memory cells arranged in a first matrix. When one of the memory cells is selected based on an address signal, a read data signal corresponding to a storage data of the selected memory cell is outputted. The reference memory cell matrix section includes reference memory cells arranged in a second matrix, and outputs a reference data signal for the read data signal from the selected memory cell. The sensing circuit senses the storage data based on the read data signal from the memory cell matrix section and the reference data signal from the reference memory cell matrix section. At this time, the reference memory cell matrix section outputs the reference data signal to the sensing circuit such that the reference data signal appears in substantially synchronous with the data read signal.