The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jun. 10, 1999
Tooru Ukita, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a liquid crystal display device, a TFT is formed on a first transparent insulation substrate and includes: a semiconductor layer formed adjacent to a gate insulation film; a drain and a source electrode both formed in opposite ends of the semiconductor layer; and, a gate electrode formed in the gate insulation film so as to be disposed in a partially overlapping relationship with both the drain and the source electrode. The source electrode has a source notch portion which satisfies a predetermined equation to compensate for variations in parasitic capacitance appearing between the source and the gate electrode. The device prevents both its responsivity and its aperture ratio from deteriorating and also prevents its leakage current from increasing. The device is free from any possible restrictions caused by a specific construction of the TFT used in the device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile