The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Mar. 22, 2001
Don R. Sauer, San Jose, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A method and apparatus is directed to a thermal shut down for a low drop out (LDO) regulator including a MOS transistor. An error amplifier controls the gate of the MOS transistor by comparing the regulator output voltage to a reference voltage that is generated by a reference circuit. To enhance power supply rejection and improve regulation, the error amplifier and the reference circuits are powered by a potential at an internal power supply node. A power control circuit selectively couples the internal power supply node to one of the regulated output voltage and the unregulated supply voltage. A start-up circuit may be employed to ensure that regulation begins when power is applied. A temperature sensor circuit detects when the operating temperature exceeds a predetermined temperature and activates a supply transfer circuit to couple the unregulated supply to the internal power supply node. After the internal power supply node reaches the unregulated power supply potential, a shutdown circuit deactivates the MOS transistor. A diode is coupled between the regulator output and the internal power supply node to prevent current flowing from the internal power supply node to the load when the over-temperature condition exists. A transistor mirror may be configured to couple the unregulated supply voltage to the internal power supply node when activated. The thermal characteristics of a transistors threshold voltage may be employed as a temperature sensor. Another transistor may deactivate the MOS transistor by coupling the gate of the MOS transistor to the unregulated supply voltage.