The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2001

Filed:

Jan. 14, 1998
Applicant:
Inventor:

Janardhanan S. Ajit, Sunnyvale, CA (US);

Assignee:

International Rectifier Corp., El Segundo, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/912 ;
U.S. Cl.
CPC ...
H01L 2/912 ;
Abstract

An integrated circuit is provided in which a relatively low band gap material is used as a semiconductor device layer and in which an underlying high (wide) band gap material is used as an insulating layer. The insulating material has a high thermal conductivity to allow heat dissipation in conjunction with dielectric isolation. The integrated circuit includes one or more semiconductor wells which are each surrounded on their sides by an insulating material. The bottom of the semiconductor wells are disposed atop the high band gap material which provides both electrical isolation and thermal conductivity. A semiconductor substrate may be provided to support the high band gap material. A layer of insulating material may also be provided between the high band gap material and the semiconductor substrate.


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