The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Oct. 02, 1998
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided is a semiconductor storage device that can reduce a dispersion in characteristics such as a threshold voltage and a writing performance and has a low consumption power and a non-volatility. There are included a source region,and a drain region,formed on a silicon substrate,, a channel region,located between the source and drain regions,and,, a gate electrode,that is formed above the channel region,and controls a channel current flowing through the channel region,, and a control gate insulating film,, a floating gate,and a tunnel insulating film,that are arranged in order from the gate electrode,side between the channel region,and the gate electrode,. The floating gate,is comprised of a plurality of crystal grains,linearly discretely arranged substantially parallel to the surface of the channel region