The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Aug. 15, 2000
Shrinivas Govindarajan, Glen Allen, VA (US);
Anthony Ciancio, Gilbert, AZ (US);
Other;
Abstract
An apparatus and method of tungsten via fill using a low pressure, 2-step nucleation tungsten deposition process. The tungsten via fill includes a silane soak, a nucleation film growth, and a bulk tungsten film deposition. The nucleation film growth is a low pressure, 2-step process including a controlled first nucleation film growth and a second nucleation film growth. A wafer fabricating system that includes a film depositing system and a control system is used. The film depositing system includes a reaction chamber with at least one silane-containing gas source, a tungsten-containing gas source, and a substrate heating source. The control system instructs the silane-containing gas source and the tungsten-containing gas source to flow with a significantly higher ratio of silane-containing gas (SiH,) to form a first silane-rich nucleation layer. The control system then instructs the gas sources to flow with a higher ratio of tungsten-containing gas, such as WF,, to form a second tungsten nucleation layer. The low pressure, 2-step process results with improved nucleation film step coverage.