The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jan. 06, 2000
Applicant:
Inventors:
Marty Peckerar, Silver Spring, MD (US);
Weizhong Wang, Sunnyvale, CA (US);
John Melngailis, Chevy Chase, MD (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
Channel doping and gate lithography are simulatneously performed by focusing an ion beam into the wafer through a positive or negative photoresist that is sensitive to the ion beam. Additional fabrication is then performed to provide a gate that is self-aligned with the doped channel.
Peckerar, Marty. (2001). Fully self-aligned high speed low power mosfet fabrication (U.S. Patent No. 6309934). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6309934
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile