The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2001

Filed:

Jan. 06, 2000
Applicant:
Inventors:

Marty Peckerar, Silver Spring, MD (US);

Weizhong Wang, Sunnyvale, CA (US);

John Melngailis, Chevy Chase, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract

Channel doping and gate lithography are simulatneously performed by focusing an ion beam into the wafer through a positive or negative photoresist that is sensitive to the ion beam. Additional fabrication is then performed to provide a gate that is self-aligned with the doped channel.


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