The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Oct. 17, 2000
Applicant:
Inventors:
Atsushi Hachisuka, Hyogo, JP;
Takeshi Noguchi, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18236 ;
U.S. Cl.
CPC ...
H01L 2/18236 ;
Abstract
Source/drain regions of an MOS transistor are formed at a surface of a p-type silicon substrate. A storage node electrically connected to the source/drain regions penetrates a bit line to reach the n-type source/drain region. The storage node and the bit line are insulated from each other by a sidewall insulating layer. Thus, a semiconductor memory device suitable for high integration is obtained in which short-circuit between the storage node and the bit line on a gate electrode layer can be prevented.