The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2001

Filed:

Jul. 28, 2000
Applicant:
Inventors:

Q. Z. Liu, Irvine, CA (US);

Bin Zhao, Irvine, CA (US);

David Howard, Irvine, CA (US);

Assignee:

Conexant Systems, Inc., Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/18234 ;
Abstract

Method for fabrication of on-chip inductors and related structure are disclosed. According to one embodiment, inductors are formed by patterning conductors within a certain dielectric layer in a semiconductor die. Thereafter, the entire dielectric layer in the semiconductor die is subjected to a blanket implantation or sputtering of high permeability material. According to another embodiment, a first area in a semiconductor die is covered, for example, with photoresist. A second area in the semiconductor die includes a patterned conductor which is to be used as an inductor. The patterned conductor is also covered, for example, with photoresist. The second area, excluding the covered patterned conductor is subjected to implantation or sputtering of high permeability material. According to yet another embodiment, a first area of a semiconductor die is covered, for example, with photoresist. A second area in the semiconductor area includes a patterned conductor which is to be used as an inductor. This second area, including the patterned conductor, is subjected to implantation or sputtering of high permeability material. The implantation or sputtering of high permeability materials result in the inductors having much higher inductance values than they would otherwise have.


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