The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Sep. 21, 1998
Jenn-Hwa Huang, Gilbert, AZ (US);
Benjamin W. Gable, Chandler, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
David Rhine, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A manufacturable GaAs VFET process includes providing a doped GaAs substrate with a lightly doped first epitaxial layer thereon and a heavily doped second epitaxial layer positioned on the first epitaxial layer. A temperature tolerant conductive layer is positioned on the second epitaxial layer and patterned to define a plurality of elongated, spaced apart source areas. Using the patterned conductive layer, a plurality of gate trenches are etched into the first epitaxial layer adjacent the source areas. The bottoms of the gate trenches are implanted and activated to form gate areas. A gate contact is deposited in communication with the implanted gate areas, a source contact is deposited in communication with the patterned conductive layer overlying the source areas, and a drain contact is deposited on the rear surface of the substrate.