The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jun. 30, 1998
Johann Meier, Corcelles, CH;
Ulrich Kroll, Corcelles, CH;
Universite de Neuchatel-Institut de Microtechnique, Neuchatel, CH;
Abstract
The device (,) comprises a deposition chamber (,) containing two electrodes (,), one of which comprises a support (,) for a substrate (,) and is earthed, the other being connected to an electric radio frequency generator (,). The device includes a mechanism (,) for extracting gas from the chamber (,) and a mechanism (,) for supplying gas. The device also comprises a mechanism for purification (,) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (,), purifying the gases using purification a mechanism (,), introducing these purified gases into the chamber (,), then creating a plasma between the electrodes (,). A film of intrinsic microcrystalline silicon in then deposited on the substrate.