The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jun. 03, 1999
Petrus M. Meijer, Eindhoven, NL;
Bartholome S. Manders, Nijmegen, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing an electronic device with two layers of organic-containing material which enables a structure with well-defined dimensions to be made in the layers of organic-containing material. This is accomplished through a series of steps of applying a first layer of organic-containing material to a substrate, covering the it with a first layer of inorganic material, applying a second distinct layer of inorganic material, providing a first mask layer of resist having first openings, and etching through the second layer of inorganic material at the first openings using an etch process where the second inorganic material is selectively etched with respect to the first inorganic material. The first mask layer of resist is removed, and etching is performed through the first layer of inorganic material at the location of the first openings. A second layer of organic-containing material is applied and is covered with a third layer of inorganic material. A fourth layer of distinct inorganic material is applied, and a second mask layer of resist having second openings is provided. Etching takes place through the fourth layer of inorganic material at the second openings using an etch process where the fourth inorganic material is selectively etched with respect to the third inorganic material. The second mask layer of resist is removed, and etching through the third layer of inorganic material at the second openings takes place.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile