The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jul. 24, 2000
Shozo Yuge, Chigasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A compound semiconductor light emitting element has a unique SCH structure having InGaN graded layers with a gradiunt in content of In interposed between an InGaN active layer and AlGaN cladding layers to ensure a good crystallographic property of the active layer, to maintain and hetero interfaces on and above the active layer in a good condition and to prevent fluctuation in thickness of the active layer, so that a compound semiconductor light emitting element with a high emission efficiency and reliability or a laser element with a high slope efficiency and reliability be obtained. The InGaN graded layers with gradually changed In compositions can be made by increasing or decreasing the temperature while maintaining the supply amount or the ratio of the In source material relative to the supply amount of the other group III source materials in a constant value.