The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2001

Filed:

Oct. 19, 1999
Applicant:
Inventors:

Yuma Horio, Hamamatsu, JP;

Hiroyuki Yamashita, Hamamatsu, JP;

Toshiharu Hoshi, Hamamatsu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/520 ;
U.S. Cl.
CPC ...
H01L 3/520 ;
Abstract

Thermoelectric materials having a high performance index and thermoelectric elements are provided. The present thermoelectric materials are constituted by at least one element selected from the group consisting of Bi and Sb, at least one element selected from the group consisting of Te and Se, and, if necessary, at least one element selected from the group consisting of I, Cl, Hg, Br, Ag, and Cu. The long axis of each crystal grain of the thermoelectric material grows in the direction parallel to the pressing direction at the time of press formation, and the aspect ratio D/d of each crystal grain, which represents a ratio between the average crystal grain size along the long axis D to the average crystal grain size along the short axis d, is more than 1.5. The C-plane is oriented parallel to the pressing direction.


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