The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Apr. 25, 1996
Mitsuru Taguchi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A hard Al oxide film having a high melting point, which grows on the surface of an Al—Cu film during a wafer is carried in atmospheric air, obstructs the burying of a viahole with the Al—Cu film by high pressure reflow, with a result that a void remains in the hole. The present invention is intended to remove such an Al oxide film grown on the Al—Cu film formed by sputtering, by Ar,sputtering/etching directly before high pressure reflow. Moreover, when a Ti oxide film is present on the surface of a Ti based underlying film formed by CVD, an Al oxide film is possibly grown at the boundary between the Ti based underlying film and an Al—Cu film laminated thereon. In this case, the Ti oxide film is similarly removed directly before formation of the Al—Cu film, thereby preventing the growth of the Al oxide film. With this method, it is possible to highly keep thermal flow of a conductive film in a high pressure reflow process, and hence to desirably bury a connection hole with the conductive film.