The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2001

Filed:

Apr. 03, 2000
Applicant:
Inventors:

Tadashi Igarashi, Tokyo, JP;

Akinori Tsukuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/146 ; H01L 2/178 ; H01L 2/1301 ;
U.S. Cl.
CPC ...
H01L 2/146 ; H01L 2/178 ; H01L 2/1301 ;
Abstract

In a method, first and second circuit elements are provided on a surface of a semiconductor substrate; and a hole is formed in the semiconductor substrate between the first and second circuit elements. Then, the semiconductor substrate is divided at the hole to separate the first and second circuit elements from each other.


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Igarashi, Tadashi. (2001). Semiconductor device and method for fabricating the same (U.S. Patent No. 6306731). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6306731

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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