The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
May. 24, 1999
Kyu-Pil Lee, Kyungki-do, KR;
Samsung Electronics Co, Ltd., , KR;
Abstract
A semiconductor device and method for manufacturing the same includes a plurality of memory cells, each cell having a transistor formed on a first semiconductor substrate and comprising first and second impurity regions and a gate electrode, and a capacitor comprising a first electrode connected with the first impurity region of the transistor and a second electrode formed on the first electrode with a dielectric film disposed therebetween, wherein a channel region formed between the first impurity region and the second impurity region of the transistor is vertically located on the capacitor, and a contact hole connecting the second impurity region of the transistor with the bit-line is vertically located on the channel region, thus achieving the cell area required for one-giga-bit memory devices and beyond and enabling increased capacitance.