The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2001

Filed:

Mar. 30, 2000
Applicant:
Inventors:

Maria C. Chan, San Jose, CA (US);

Hao Fang, Cupertino, CA (US);

Mark S. Chang, Los Altos, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract

A method and system for fabricating a flash memory array comprising a core area and a periphery area is disclosed. The method and system comprises depositing a layer of poly2 over the core area and the periphery area, selectively etching the core area, and selectively etching the poly2 only in the periphery area wherein the occurrence of stringers is reduced. Through the use of the preferred embodiment of the present invention, the core and periphery areas are etched separately after the deposition of the poly2, thereby reducing the occurrence of stringers at the core/periphery interface. Accordingly, the occurrence of unwanted electrical shorting paths between the adjacent transistors is substantially reduced.


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