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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6306675 B1

PDFFull Text
Date of Patent:
Oct. 23, 2001

Filed:

Oct. 08, 1999

Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices

Applicant:
Inventors:

Ignatius S. T. Tsong, Tempe, AZ (US);

David J. Smith, Tempe, AZ (US);

Victor M. Torres, Arlington, TX (US);

John L. Edwards, Jr., Phoenix, AZ (US);

R. Bruce Doak, Tempe, AZ (US);

Assignee:

Arizona Board of Regents Acting on behalf of Arizona State University, Tempe, AZ (US);

Attorney:

Baker Botts L.L.P.

Primary Examiner:

Long Pham

Assistant Examiner:

Ravindra B Shukla

Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

In semiconductor devices such as laser diodes (LD) and light emitting diodes (LED) based on gallium nitride thin films, low defect density is desired in the gallium nitride film. In the fabrication of such devices on a silicon carbide substrate surface, the gallium nitride film is formed on the silicon carbide substrate after the substrate surface is etched using hydrogen at an elevated temperature. In another embodiment, an aluminum nitride film is formed as a buffer layer between the gallium nitride film and the silicon carbide substrate, and, prior to aluminum nitride formation, the substrate surface is etched using hydrogen at an elevated temperature.

Find Patent Forward Citations

Tsong, Ignatius S. T.. (2001). Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices (U.S. Patent No. 6306675). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6306675

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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