The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2001

Filed:

Nov. 27, 2000
Applicant:
Inventors:

Jin Shin, Seoul, KR;

Sang Hoan Chang, Kyungki-Do, KR;

Seoung Ouk Choi, Kyungki-Do, KR;

Keon Soo Shim, Kyungki-Do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ; H01L 2/9788 ;
U.S. Cl.
CPC ...
G11C 1/604 ; H01L 2/9788 ;
Abstract

There is disclosed a multi-bit flash memory cell and programming method using the same. In order to solve the problems that the size of a cell per unit is increased, reliability of a device is degraded due to a high operating voltage and a circuit necessary for driving the cell becomes complicated, the multi-bit flash memory cell and programming method using the same according to the present invention stores information of various states, by interchangeably programs a drain and a source in a cell array of virtual ground type, in a structure in which that two types of cells look like connected serially by doping a floating gate in a flash memory cell with two regions of a N type and a P to type.


Find Patent Forward Citations

Shin, Jin. (2001). Multi-bit flash memory cell and programming method using the same (U.S. Patent No. 6304484). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6304484

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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