The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Mar. 17, 1998
Kenneth Rudolph Farmer, II, Dunellen, NJ (US);
Other;
Abstract
The present invention relates to a tunnel barrier and to uses thereof, particularly in conjunction with devices and integrated circuits fabricated with silicon substrates, and including the preparation of tunnel diodes, dielectric structures, transistors, memory cells and the products embodying one or more of the same. The tunnel barrier of the invention is designed to confer effective and reliable charge transfer performance, and is particularly well suited for the fabrication of nonvolatile memory cells. In an embodiment of the invention, with the barrier incorporated in a diode, the present evacuee facilitates over 10,bi-directional charge transfers across the barrier without destroying it. The multiple layer nature of the barrier, coupled with the use of direct tunnel oxides, provides desirable functionality, stability, and resistance to dielectric degradation, thus improving operating, storage and retention characteristics over conventional nonvolatile devices.