The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Dec. 14, 1999
In Seok Yeo, Kyoungki-do, KR;
Se Aug Jang, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-Do, KR;
Abstract
A method of forming a gate electrode in a semiconductor device which can effectively prevent abnormal oxidation of a metal layer without occurring thermal budget and the deterioration of a gate insulating layer during gate re-oxidation process, is disclosed. In the present invention, one selected from a group consisting of an iridium(Ir) layer, a ruthenium(Ru) layer and an osmium(Os) layer capable of forming a nonvolatile conductive metal oxide layer, is used as a metal layer of a gate electrode instead of a W layer in conventional art. Therefore, although a gate re-oxidation process is performed by a well known method, it is effectively prevented that the metal layer is abnormally oxidized, thereby forming an uniform oxide layer on the side wall of the gate. Furthermore, since the oxide layer is conductive, the resistivity of the gate electrode is reduced.