The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Sep. 21, 1999
Kuan-Chou Sung, Taoyuan, TW;
Mosel Vitelic, Inc., , TW;
Abstract
A method for fabricating a type of Trench Mask ROM cell comprises steps including: providing a substrate doped lightly with p-type dopant, sequentially forming a pad oxide layer and a nitride layer on the substrate; etching back the pad oxide layer, the nitride layer and the substrate to form plural trenches; a gate oxide layer being formed on surfaces of each trench; then, implanting n,-type ions into the substrate beneath the pad oxide layer and between each two adjacent trenches; and, forming a polysilicon layer on the gate oxide and pad oxide; finally, implanting n,-type ions into the substrate beneath the gate oxide layer on bottoms of selected trenches. And, it is appreciated that the sequence of the formation of plural trenches and implanting n,-type ions into substrate between each trench can be reversed in the embodiment without affecting subsequent steps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile