The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Jun. 27, 2000
Takuji Hatano, Shiga-ken, JP;
Akira Sato, Suita, JP;
Minolta Co., Ltd., Osaka, JP;
Abstract
A method of manufacturing a near field light generating device is provided. A photoresist layer is formed on a transparent layer (,). Then, illumination light (L,) directed from the side of solid immersion lenses (,) passes through first openings (,) and the transparent layer (,) to reach and expose the photoresist layer. After development of the photoresist layer, exposed parts of the photoresist remain as microscopic resist regions (MR) in positions corresponding to the first openings (,). After a second opaque layer (,) is formed on the transparent layer (,) and the microscopic resist regions (MR), the microscopic resist regions (MR) are removed by a lift-off method to form second openings (,) in the second opaque layer (,). The first openings (,) are thus used as a photomask to form the second openings (,). Therefore, a large number of microscopic openings (MO) having good product quality are formed accurately and easily as the near field light generating device.