The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
May. 15, 1996
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/134 ;
U.S. Cl.
CPC ...
G11C 1/134 ;
Abstract
A nonvolatile semiconductor memory device includes an n-type region which is in contact with n,drain diffusion region at a surface of p-type silicon substrate and covers the periphery thereof. The device also includes a p-type impurity region which is in contact with n-type region and covers the periphery thereof. The n,drain diffusion region, n-type region and p,impurity region extend to region located immediately under the floating gate electrode. Thereby, the nonvolatile semiconductor memory device has a structure which can promote injection of high energy electrons along a gate electrode direction.