The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Oct. 08, 1999
Applicant:
Inventor:
Mark W. Wanlass, Golden, CO (US);
Assignee:
Midwest Research Institute, Kansas City, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 3/100 ;
Abstract
A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP,As,n-layer formed with an n-type dopant, an Ga,In,As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP,As,p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.
Quick Actions:
Wanlass, Mark. (2001). Low-bandgap double-heterostructure inasp/gainas photovoltaic converters (U.S. Patent No. 6300557). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6300557
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile