The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Apr. 27, 2000
Applicant:
Inventors:
Assignee:
Matsuhita Electronics Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
After a first metal film and a first interlayer insulating film are deposited successively on an insulating film on a semiconductor substrate, a via hole is formed in the first interlayer insulating film. A second metal film is grown in the via hole to form a via contact composed of the second metal film, while a recessed portion is formed over the via contact in the via hole. A cap layer composed of a material different from the material of the first metal film is formed in the recessed portion. Then, the first metal film is patterned by using a mask pattern for forming a lower interconnect and a cap layer as a mask, whereby a lower interconnect is formed.