The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Aug. 04, 2000
Mitsuhiro Togo, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a trench capacitor type semiconductor memory device including a semiconductor substrate having a trench and first and second impurity diffusion source/drain regions, a capacitor electrode buried in the trench, and a substrate-side capacitor electrode and a capacitor insulating layer within the semiconductor substrate and adjacent to a lower portion of the capacitor electrode, a buried insulating layer is formed between the semiconductor substrate and an upper portion of the capacitor electrode. The buried insulating layer is thicker than the capacitor insulating layer. However the buried insulating layer on a surface of the second impurity diffusion source/drain region is thin, or in direct contact with the capacitor electrode. A silicide layer is formed on the second impurity diffusion source/drain region and the capacitor electrode.