The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Apr. 24, 1996
Toshiyuki Hirota, Tokyo, JP;
Shuji Fujiwara, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
There is provided a method of manufacturing a semiconductor device having a MOS transistor formed on a silicon substrate, and a stacked capacitor constituted by an information storage electrode provided above the MOS transistor through an insulating interlayer and a counter-electrode separated from the information storage electrode due to the presence of a capacitor insulating film. In this method, the capacitor is formed by adding an impurity in a silicon oxide film which is formed on the insulating interlayer and used to shape the information storage electrode, and performing etching by using a chemical solution containing phosphoric acid, sulfuric acid, nitric acid, or a solution mixture thereof, or a chemical solution containing a solution mixture of an aqueous ammonia solution and a hydrogen peroxide solution to selectively remove the silicon oxide film added with the impurity.