The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Jul. 01, 1999
Taishi Kubota, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method of forming a polycrystalline silicon film, the polycrystalline silicon film is formed under film formation conditions of a film formation rate of 0.9r,to 1.1r,, where r,(nm/minute) is an average rate of forming the polycrystalline silicon film on each of a plurality of substrates on which oxide films are formed so as to provide the roughness of the interface between the oxide film on the substrate and the polycrystalline silicon film of less than 1 nm. As a result, it is possible to decrease the roughness of the interface between a gate oxide film and the polycrystalline silicon film and to improve reliability for ensuring the long-time use of the gate oxide film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile