The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
May. 13, 1999
Dae-Gyu Moon, Anyang-shi, KR;
LG. Philips LCD., Co., Ltd., Seoul, KR;
Abstract
A method of fabricating a thin film transistor includes crystallizing an amorphous silicon layer having a sloping surface and a flat surface by an SLS technique using a laser beam having predetermined energy density so as to melt the sloping surface as well as the flat surface of the amorphous silicon layer to form a crystallized silicon layer and forming the active layer by selectively etching the crystallized silicon layer. The laser beam is applied non-vertically to the sloping surface while the laser beam is applied vertically to the flat surface. Although the sloping surface and the flat surface of the amorphous silicon layer are irradiated with a laser beam having the same laser energy density, the absorbed energy density of the sloping surface may be lower than that of the flat surface. The laser beam generates a first energy density to substantially melt the sloping surface and a second energy density to substantially melt the flat surface of the amorphous silicon. The amorphous silicon layer is irradiate with the laser beam having the first energy density to substantially melt both the sloping and flat surfaces.