The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Jul. 20, 1999
Kazuo Kikuchi, Kanagawa, JP;
Shinji Kubota, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A process for the production of a cold cathode field emission device comprising the steps of; (A) forming a patterned electrode layer on a dielectric supporting substrate, (B) forming an insulating interlayer on the dielectric supporting substrate and the electrode layer, (C) forming a gate electrode constituted of a first conductive layer on the insulating interlayer, (D) forming an opening portion which penetrates through at least the insulating interlayer and has a bottom portion where the electrode layer is exposed, (E) forming a side-wall of an insulating material on the side wall of the opening portion, to decrease the opening portion in diameter, (F) forming a second conductive layer on the entire surface including the inside of the opening portion by a physical or chemical vapor deposition method, (G) etching back the second conductive layer to form an emitter electrode shaped in the form of a column and constituted of the second conductive layer in the opening portion, and (H) removing at least an upper portion of the side-wall.