The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Jun. 27, 2000
Method for manufacturing silicon compound having substituents bonded to silicon atoms via si-c bonds
Applicant:
Inventor:
Mamoru Tachikawa, Kanagawa, JP;
Assignee:
Dow Corning Asia, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03G 7/708 ;
U.S. Cl.
CPC ...
C03G 7/708 ;
Abstract
A hydrosilylation reaction method that achieves high catalytic activity and stability, and improves the positional selectivity of the hydrosilylation reaction product. The method comprises reacting an unsaturated compound selected from the group consisting of aromatic vinyl compounds and allyl halides with a silicon compound having hydrosilyl groups described by formula HSiR,(Z),, where n=0, 1, or 2, R is a hydrocarbon group and Z is selected from the group consisting of a silamino group, siloxy group, and siloxanoxy group in the presence of a carboxylic acid compound, a silyl ester of a sulfonic acid, and a platinum catalyst.